Abstract
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch-up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices.
Highlights
The Insulated Gate Bipolar Transistor (IGBT) was added to the family of power devices to overcome the high on-state loss of power MOSFETs
In this work we present another approach which consists in defining the IGBT as a simple macromodel based on its equivalent circuit
The core of this macromodel is the IGBT equivalent circuit marked with bold typeface, i.e., a p-n-p bipolar transistor driven by a nchannel MOSFET in a pseudo-Darlington configuration [8]
Summary
Centre Lorrain d’Optique et d’Electronique des Solides, SupOlec, 2 rue Edouard Belin, 57078 Metz Cedex 3, France (Received I July 1998; In finalform 4 September 1998). A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch-up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices
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