Abstract
To better predict the high-frequency switching operation of the half-bridge circuit in power converters, the value of the parasitic elements of these devices must be accurately evaluated. A new MOSFET-based half-bridge circuit parasitic inductances extraction method using two-port S-parameters is proposed in this paper. By changing the terminal connection of the half-bridge circuit, we can treat it as several different two-port networks, and then detailed network analysis can be performed on it. The parasitic parameters of multi-terminal actual circuits such as half-bridge can be extracted accurately and quickly through the simple measurement steps and calculations of the proposed method.
Highlights
Power converters are developing towards high switching frequency, which is the main trend to improve efficiency and power density
The effects of parasitic parameters will become more significant with the increase of switching frequency and bring many negative effects such as switching oscillations, power losses, and electromagnetic interference (EMI) noise
A two-port measurement method based on the scattering parameter (S-parameter) is proposed to extract the parasitic parameter of the half-bridge circuit which can represent the multi-terminal circuit to some extent
Summary
Power converters are developing towards high switching frequency, which is the main trend to improve efficiency and power density. A two-port measurement method based on the scattering parameter (S-parameter) is proposed to extract the parasitic parameter of the half-bridge circuit which can represent the multi-terminal circuit to some extent. Without problems such as poor convergence and long computation time of calculation method, the proposed method provides a method for extracting parasitic parameters of high order circuits such as multi-port circuits and accelerates the extraction of the parasitic parameter.
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