Abstract
We compute the electron and hole mobilities in Trigate and gate-all-around silicon nanowires (SiNWs) within the nonequilibrium Green’s Function framework. We then derive a simple model for the dependence of the mobility on the SiNW width and height. This model interpolates between the square SiNW and thin film limits. In order to provide a complete description of the mobility in SiNW devices, we calculate the phonon, surface roughness, and remote Coulomb-limited mobilities of square nanowires and of thin films with side or thickness ${t}=5, 7$ , and 10 nm. The mobility of arbitrary rectangular SiNWs with width ${W}={t}$ or height ${H}={t}$ can then be reconstructed from these partial mobilities using Matthiessen’s rule. We show that these models successfully reproduce the trends measured on ${n}$ - and ${p}$ -type devices with different widths and orientations.
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