A simple implement of submicron meter RRAM array based on porous SiO2 film with uniform and large pores

Abstract

Resistive Random Access Memory (RRAM) array is considered as a promising trend for future memory devices. At present, the integration of RRAM array into CMOS circuit is limited by the density and scale of the memory element. In this paper, a new way to fabricate RRAM array with submicron meter range element size is proposed. Porous SiO2 film with large and uniform through-holes is prepared as nano-template for device fabrication. Plasma oxidation is utilized to grow 100 nm titanium oxide resistive switching (RS) layer. Discrete circular RS cells with diameter of 400 nm are obtained, with a vertical structure of AgTiO2TiPtTiSi, from top to bottom. Good and uniform RS properties are acquired by conductive Atomic Force Microscope (cAFM).