Abstract
Charge transport studies on a bipolar resistive random access memory device based on aluminum oxide were successfully undertaken. The device was designed in a simple metal–insulator–metal format, which was characterized in detail for structural, morphological and electrical measurements. A low cost technique has been adopted for the formation of the memristive element, exhibiting three orders of magnitude change between its two states of conductivity. The obtained memristive behavior is explained based on evidence obtained from charge transport characteristics. Formation/rupture of the conducting filament by external electric field is found to be the main mechanism behind resistive switching.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call