Abstract
In this letter, the Ti/SiN/Au bipolar resistive random access memory devices were fabricated and investigated. The devices show low operation voltages (SET voltage ∼0.6V, RESET voltage ∼−0.5V), low switching currents (∼1 mA) and stably high/low resistance ratio. The power densities of SET and RESET process were both in the order of 10-9 (W/μm2), which were much lower than previous literature results about SiN-based resistive switching cells. The conduction mechanism is dominated by the trap-controlled space charge limited current (SCLC) mechanism. In addition, using the Ti and Au as the electrodes is the significant reason for the excellent characteristics of the device.
Published Version
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