Abstract
A model is presented which calculates the collector and base current densities for resonant tunneling bipolar transistors. This method combines the voltage-current relations for a heterojunction bipolar transistor and a resonant tunneling structure in a self-consistent manner to obtain the overall behavior of a resonant tunneling transistor. The model includes space-charge effects in the quantum well and predicts bistability in the current-voltage behavior, and is in good agreement with the experimental data reported on AlGaAsGaAs resonant tunneling transistors.
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