Co-integrated resonant tunneling and heterojunction bipolar transistor full adder

Abstract

We present the first resonant tunneling bipolar transistor integrated circuits operating at room temperature. The circuits are comprised of co-integrated resonant tunneling and double heterojunction bipolar transistors based on III-V heteroepitaxy on InP substrates. The resonant tunneling bipolar transistors exhibit a peak-to-valley collector current ratio exceeding 70 which is higher than previous room temperature reports. Using this technology we demonstrate a 3-transistor XNOR, a 6-transistor XOR, a 5-transistor CARRY, and a 17-transistor full adder, all using a 3 V supply. >