Nanoelectronic circuits using resonant tunneling transistors and diodes

Abstract

Integration of RTDs (resonant tunneling diodes) into one or more terminals of conventional transistors has led to a large family of resonant tunneling transistors. These include the resonant tunneling bipolar transistor (RTBT) and the resonant tunneling hot electron transistor (RHET). These devices are fabricated by placing RTDs in the emitter contact of heterojunction bipolar or hot electron transistors, respectively. Another unique nanoelectronic device is the bipolar quantum-well resonant tunneling transistor (BiQuaRTT), which is a heterojunction bipolar transistor (HBT) with a quantum-well structure incorporated into the base-collector junction. Negative transconductance devices, such as the RTBT, can be used to implement single-transistor logic gates. The RTBT characteristic can be enhanced to provide multiple negative transconductance regions by adding additional RTDs in the emitter epitaxial stack.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>