Abstract
Resistive Random-Access Memory (RRAM) has been widely researched as a candidate of non-volatile memory, and also for application in hardware security in recent years. However, most of these applications only take advantage of certain evident features of RRAM (e.g. cycle-to-cycle or device-to-device variation), and can only implement a single function. In this paper, a novel data hiding technique is proposed to implement two different functions in normal RRAM devices that utilize the impact of Form resistance on the applied pulse number of SET process. The feasibility of this technique is experimentally demonstrated on a 1Kb RRAM chip, which is proved by hiding additional data in normal RRAM. The reliability of the proposed technique is further optimized using a multi-RRAM per bit method. The experimental results show that the optimized hidden data demonstrates nearly ideal Bit Error Rate (BER) with 8- RRAM per bit. The BER is below 3%, which can be maintained after more than 1000 cycles. In addition, this work also demonstrates that the data hiding technique has good temperature stability between -25āC and 100āC.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call