A Review of the types of disturbances and suppression methods for SiC MOSFET driver

Abstract

In recent years, wide-bandgap semiconductor devices have developed rapidly, and their usage in various power electronic devices is also increasing. Among them, SIC MOSFET devices have the advantages of high temperature resistance, high voltage resistance, and fast switching, so as switching devices, they have been widely used in various power electronic topologies. However, the higher switching frequency and various driving interference factors make the driving module of SIC MOSFET need higher quality. In order to make better use of SIC MOSFET and ensure that it can switch stably in the circuit, it is necessary to study the driving design method of SIC MOSFET. This article expounds and summarizes the types of disturbances encountered by SiC MOSFET drivers and their suppression methods. Firstly, the basic status and basic conditions of SiC MOSFET device driving are introduced. Then it is explained that under different driving conditions, the kinds of disturbances received by driving are different, and their effects are also different. Finally, the methods of suppressing interference are summarized and compared.