Design of a Dual Channel High Current Silicon Carbide MOSFET Driver

Abstract

In recent years, the technology of wide bandgap devices has developed rapidly, and its utilization rate in various power electronic devices is also higher and higher. Among them, SiC MOSFET has the advantages of high temperature resistance, high voltage resistance and fast switching, so it has been widely used in various topologies. However, higher switching frequency and various driving interference factors make the driver module of SiC MOSFET need higher quality. In order to make better use of SiC MOSFET and ensure that it can switch stably in the circuit, it is necessary to study the design method of SiC MOSFET Driver. This paper presents a design scheme of SiC MOSFET driver module which is suitable for dual channel high current condition. The driver has DC/DC isolated power supply, under voltage protection and short circuit protection. It provides +15V/-5V driving voltage, dual channel output, switching delay time of about 50ns and peak current of 14A. The schematic diagram of driving and main circuit is drawn, the experimental platform is built, and the effectiveness of the design scheme is verified by experiments.