Abstract
A broad overview of modern discrete power semiconductor devices is given. The discussion centers around new device designs and modifications of Schottky rectifiers, insulated gate bipolar transistors (IGBTs), MOS-controlled thyristors (MCTs), gate turn-off thyristors (GTOs), and depletion-mode transistors and thyristors. Electrically and optically triggered devices are included in the discussion. Also, there is a brief description of new developments for devices built from advanced semiconductor materials such as GaAs, SiC, and diamond, including high voltage intrinsic switches.
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