Evaluation of modern power semiconductor devices and future trends of converters

Abstract

A review of the modern power semiconductor devices that appeared in the 1980s, i.e., the insulated gate bipolar transistor (IGBT), the static induction transistor (SIT), the static induction thyristor (SITH), and the MOS-controlled thyristor (MCT) is presented. The characteristics of these devices are discussed and compared from the viewpoint of power electronics applications. Although the IGBT is well known, the power electronics community is somewhat unfamiliar with the latter three devices. For completeness, a brief review of other power devices, such as the thyristor, the triac, the gate turnoff thyristor (GTO), the bipolar junction transistor (BJT), and the power MOSFET, is also incorporated. Finally, future converter trends are outlined. >