Power Semiconductor Devices

Abstract

Power semiconductor devices constitute the heart of power electronic system. Modern power electronics era started with the introduction of power semiconductor devices in the 1950’s, particularly with the commercial introduction of thyristor in 1958. Since then, many power semiconductor devices, such as triac, gate turn-off thyristor (GTO), bipolar power transistor (BPT or BJT), power MOSFET, insulated gate bipolar transistor (IGBT), static induction transistor (SIT), static induction thyristor (SITH) and MOS-controlled thyristor (MTC) have appeared. These power switching devices along with the microelectronic circuits are recently ushering a new era in power electronics and motion control systems. Power electronics and motion control are expected to have an increasing influence on a nation’s industrial productivity, energy conservation and urban pollution problems in the coming decades. This chapter will give a comprehensive state-of-the-art technology review of power semiconductor devices.