Abstract
Since the long-channel behaviour of MOS devices can be retained in spite of a severe reduction of the MOS transistor channel length, there are still many applications for long-channel MOS transistor models. This paper is a review of such models and its aim is to elucidate the influence of two effects: the dependence of the surface potential on the gate voltage in the strong inversion and mobility modulation along the channel due to the effective transverse electric field variation. The paper contains also a brief discussion of quantum-mechanical effects and mobility modelling.
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