Abstract
An explicit analytical expression relating the interface trap densities and transconductance is derived for enhancement mode field effect transistors without any simplifying assumptions regarding the energy distribution of traps. Using this relationship, the interface trap densities were calculated from the experimental transconductance data and compared with experimental data and that provided in the current literature. Interface states are important material surface characteristics that may significantly affect the device behavior. Our expression provides a simple and convenient method to reliably estimate interface trap densities from the readily available transconductance data provided in the pertinent literature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
