Abstract
ABSTRACTAn explicit analytical expression relating the interface trap densities and transconductance is derived for enhancement mode field effect transistors without any simplifying assumptions regarding the energy distribution of traps. Using this relationship, the interface trap densities were calculated from transconductance data and compared to experimental data and that provided in the literature. Our expression provides a simple and convenient method to reliably estimate interface traps densities from the readily available transconductance data provided in the pertinent literature.
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