Abstract

This article presents the design of a dual-mode V-band power amplifier (PA) that enhances the efficiency at power back-off (PBO) using load modulation. The PA utilizes a reconfigurable two-/four-way power combiner to enable two discrete modes of operation-full power and back-off power. The power combiner employs two techniques to further improve the PA efficiency at PBO: 1) usage of transformers with non-uniform turns ratios to reduce the difference in impedance presented to the PA cores between the two modes and 2) utilize a proposed switching scheme to eliminate the leakage inductance associated with the disabled path in back-off power mode (BPM). The two-stage PA achieves a peak gain of 21.4 dB with a fractional BW (fBW) of 22.6% (51-64 GHz). At 65 GHz, the PA has a P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> of +17.9 dBm with an OP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1 dB</sub> of +13.5 dBm and a peak power added efficiency (PAE) of 26.5% in full-power mode. In BPM, the measured P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> , OP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1 dB</sub> , and peak PAE are +13.8 dBm, +9.6 dBm, and 18.4%, respectively. The PAE is enhanced by 6% points at a 4.5-dB back-off. The PA is capable of amplifying a 6 Gb/s 16-QAM modulated signal with an EVM <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</sub> of -20.7 dB at an average P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</sub> /PAE of +13 dBm/13.6%, respectively. This PA was implemented in 16-nm FinFET, occupies a core area of 0.107 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and operates under a 0.95-V supply.

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