Abstract
Simulation of gamma-ray semiconductor detector generally makes assumptions such as electric field uniformity, constancy of mobilities and trapping times respect to electric field, etc. At least a part of these assumptions are not valid. A way to overcome this problem is to measure the collection efficiency as a function of depth directly. By a particular version of the micro-IBIC technique we measured the collection efficiency on a section of a CdTe detector and we used the experimental data as input for the Monte Carlo code ISIDE for simulating pulse height spectra produced by 57Co. The results obtained by this more realistic approach are presented and can be compared both with other kinds of simulations and with available experimental data.
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