Abstract
Sintered Cu interconnection technology for power electronics has been widely investigated owing to its unique low temperature sintering high temperature service characteristics and price superiority. However, the currently research usually requires long sintering time (>30 min) and high pressure (>5 MPa). Here, we synthesized copper formate coated Cu nanoparticles (Cu-FA) by a solvothermal reaction, which can achieve rapid sintering at 260 °C with pressure of 5 MPa in 5 min to obtain robust joints of 67.41 MPa for fabricating SiC MOSFET devices. After 1000 h thermal aging and 1000 cycles thermal shock, the strength of joints can still maintained above 50 MPa. Moreover, SiC MOSFET modules were demonstrated using Cu-FA die attachment, which exhibit a 43.6 % lower thermal resistance compared to commercial Sn–Pb solder. Furthermore, copper paste performs better in long-term reliability. This paper provides an effective way to obtain high quality sintered Cu joints rapidly, which is suitable for the packaging of next generation power devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
