A Program-Erasable High-$\kappa$$\hbox{Hf}_{0.3}{\hbox{N}}_{0.2}{\hbox{O}}_{0.5}$ MIS Capacitor With Good Retention

H J Yang,S P Mcalister,W J Chen,I J Hsieh,C F Cheng,Albert Chin,W L Huang

doi:10.1109/led.2007.905375

A Program-Erasable High-$\kappa$$\hbox{Hf}_{0.3}{\hbox{N}}_{0.2}{\hbox{O}}_{0.5}$ MIS Capacitor With Good Retention

H J Yang, S P Mcalister + Show 5 more

https://doi.org/10.1109/led.2007.905375

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Journal: IEEE Electron Device Letters	Publication Date: Oct 1, 2007
Citations: 21

Affiliation: National Research Council Canada, National Pingtung University of Science and Technology, Chung Hua University, University System of Taiwan

#Device Retention #Dielectric Layer + Show 8 more

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Abstract

We describe a programmable-erasable MIS capacitor with a single high-k Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of ~6.6 fF/mum2, low program and erase voltages of +5 and -5 V, respectively, and a large DeltaVfb memory window of 1.5 V. In addition, the 25degC data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.

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