A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

Abstract

The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of GaN metal–insulator–semiconductor (MIS) structures have a frequency dependence due to the capture and emission of electrons by the high density of the interface states. However, the details of how an interface state affects C–V and G–V characteristics is still not well understood. In this paper, we report a numerical modeling method that can simulate the frequency dependent C–V and G–V characteristics of GaN MIS structures.