A numerical model of GaN based cylindrical junctionless gate all around MOSFET for subthreshold region at cryogenic temperatures

Abstract

In this paper, a temperature dependent numerical model for Subthreshold region has been developed for Surface Potential, Subthreshold Current and Subthreshold Slope of GaN Junctionless (JNT) nanowire MOSFET. The effect of cryogenic temperature on the above parameters has been examined. The analytical results are found to be in good agreement with the simulated results. The performance of Gallium Nitride (GaN) based Junctionless (JNT) MOSFET at cryogenic temperatures has been presented and compared with conventional silicon and other compound semiconductor MOSFETs for channel length L = 18nm. Later the effect of temperature on the performance of GaN JNT has been studied. It is found that GaN based MOSFET shows higher drain currents, higher Ion/Ioff ratio and higher transconductance over other semiconductor materials. Also as the temperature increases the change in drain current and transconductance is minimum, so GaN based MOSFET is more immune to temperature variation.