Effect of Temperature on GaAs Junctionless FinFET Using High-κ Dielectric

Abstract

In this paper, the effect of temperature on GaAs Junctionless (JL) FinFET using high-κ dielectric has been studied at 200K, 300K, and 400K. JL FinFET, a sub-20nm device is designed using GaAs as Fin material. High-κ material is used as a BOX and as a spacer. Drain current is compared with the conventional JL device. Switching ratio is enhanced by 2.58×107 times, and I on is also increased by 70% in the proposed device as compared to JL FinFET at low temperature (200K). I on is found to decrease for GaAs JL FinFET with increasing temperature (200K to 400K), which is opposite to that of the conventional device. Even with the decrease of on current with temperature, I on shows 18% increase as compared to JL FinFET.Further, the effect of temperature on the band gap, electron mobility, and charge density is studied along the channel length. It is found that mobility plays an important role in the Galium Arsenide JL device when the device is on, and charge density plays an important role when the device is off. Higher switching ratio can be used in SRAM, and as the high-κ material is used, the device can be a good alternative for RF and microwave application in the sub-20nm regime.