Abstract
Abstract In order to obtain white light, based on near-ultraviolet (n-UV) chip needs highly efficient red, green and blue phosphor. The popular commercial blue phosphor is BaMgAl10O17:Eu2+ (BAM:Eu2+). However, BAM:Eu2+ is unstable at high temperature and the excitation band of BAM:Eu2+ couldn’t match well with n-UV (380–420 nm) chips. Therefore, the development of new blue phosphor is important. In our work, a novel Eu2+ doped Na2HfSi2O7 phosphor is successfully synthesized through the high-temperature solid-state method. Na2HfSi2O7:Eu2+ shows a strong wide absorption band peaking at 397 nm, covering the spectral scope from 250 to 450 nm on account of the 4f7 → 4f65 d1 transitions of Eu2+ ions. Under the optical excitation, The phosphor exhibits an asymmetric narrow-band emission centered at 460 nm with FWHM of 54 nm. Owing to the characteristics of wide-excitation and narrow-band emission, Na2HfSi2O7:Eu2+ is a promising candidate for n-UV WLED.
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