A Novel Two-Step Method for Improvement of MOVPE Grown InN Film on GaP(111)B Substrate

Abstract

This paper reports a novel two-step method for improvement of MOVPE grown InN film on GaP(111)B, which includes the growth of a low temperature InN buffer layer and a high temperature epilayer. The additional feature of this two-step method which distinguishes it from the commonly known two-step method is that after growing the low temperature InN buffer layer the temperature is raised to the epitaxial growth temperature while continuing the growth. It is found that a single crystalline InN film with an excellent surface morphology can be grown on GaP(111)B at high temperature (∼600 °C) by this novel two-step method. In contrast, InN film grown by the conventional two-step method is found to be very rough. Differences between these two growth techniques and their influences on the buffer layer and then on main epilayer are also discussed.