Abstract
A new processing technology that is effective to prepare self-aligned contact (SAC) holes in silicon gate MOSFET's is demonstrated. In this technology, thermally grown silicon nitride film is utilized as a mask for polysilicon gate oxidation and the oxidation of the polysilicon gate is carried out in two separate process steps. As a result, thick silicon oxide with high breakdown voltage and small coupling capacitance has been reproducibly formed on the polysilicon gate. With this technology, MOSFET's with self-aligned contact holes have been successfully fabricated. This SAC formation method is found to be applicable to MOS VLSI's.
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