Abstract
A new processing technology that is effective to prepare self-aligned contact (SAC) holes in silicon gate MOSFET's is demonstrated. In this technology, thermally grown silicon nitride film is utilized as a mask for polysilicon gate oxidation and the oxidation of the polysilicon gate is carried out in two separate process steps. As a result, thick silicon oxide with high breakdown voltage and small coupling capacitance has been reproducibly formed on the polysilicon gate. With this technology, MOSFET's with self-aligned contact holes have been successfully fabricated. This SAC formation method is found to be applicable to MOS VLSI's.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.