Abstract
A novel technique for nonvolatile data storage is presented. Data storage is achieved by inducing avalanche degradation in bipolar junctions. The resulting change in junction characteristics can be determined, and the stored value recovered. This technique can operate at lower voltages than conventional standard-CMOS EEPROM devices, but it is slower, and requires more power. Such devices could be ideal for implementation in embedded systems, where small amounts of embedded memory are required, but the cost of the additional EEPROM processing steps is prohibitive.
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