Abstract
A novel technique for non-volatile digital data storage is presented. Data storage is implemented using bipolar transistors manufactured in a standard CMOS process. The technique can operate at lower voltages than conventional standard-CMOS EEPROM devices. This technique can also be used for non-volatile analogue data storage and can be implemented in BiCMOS or bipolar processes as well as standard-CMOS, allowing for the production of cheap embedded EEPROMs.
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