A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

Ying-Chen Chen,Chih-Yang Lin,Burt Fowler,Chao-Cheng Lin,Szu-Tung Hu,Jack Lee

doi:10.1038/s41598-019-48932-5

Ying-Chen Chen, Chih-Yang Lin + Show 4 more

Open Access

https://doi.org/10.1038/s41598-019-48932-5

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Abstract

Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications.

Highlights

The Resistive random access memory (RRAM) with MIM structure is simplifying memory array design by crossbar architecture, the leakage through the sneak paths inevitably induced while accessing this RRAM crossbar networks
The transmission electron microscopy (TEM) sample is prepared by focused ion beam milling method with the scanning electron microscope (SEM)
Voltage was applied to the bottom electrode (TiN) with the top electrode (Pt) connected to ground

Summary

Introduction

The RRAM with MIM structure is simplifying memory array design by crossbar architecture, the leakage through the sneak paths inevitably induced while accessing this RRAM crossbar networks. The nonlinearity of H7G5 (NL~120) stacked device exhibits ~24 times of improvement over that of H11 device (NL~5) with SET CCL of 1 mA, which suggests a significant increased current at Vread by inserting the high-k layer i.e. HfOx in bilayer devices, with reduced current at 1/3 Vread (~10−5 A) for both structures.

Results

Conclusion