A Novel No Miller Plateau SOI-LIGBT With Low Saturation Current and Improved Switching Performance

Abstract

This article proposes a new idea to improve the $\text{d}{I}/\text{d}{t}$ and $\text{d}{V}/\text{d}{t}$ controllability of the lateral insulated gate bipolar transistor (LIGBT). By employing an inversion layer thyristor T to enhance the conductivity modulation and applying the startup nMOS M4 with small Miller capacitance, the proposed LIGBT not only realizes low saturation current, but also eliminates the Miller plateau. The simulation results demonstrate that the saturation current with a value of 682 A/cm2 is reduced by 55.5%, and the short-circuit time is improved by 375% in comparison with that of the self-adjust conductivity modulation LIGBT (SCM-LIGBT) silicon-on-insulator LIGBT (SOI-LIGBT). Especially, the $\text{d}{V}/\text{d}{t}$ and $\text{d}{I}/\text{d}{t}$ controllability are improved by 21% and 49%, respectively, since the Miller plateau is basically eliminated.