A novel MOVPE reactor with a rotating substrate

Abstract

We present a novel MOVPE reactor using a rotating substrate holder. It is the second generation of a susceptor that uses a frictionless gas bearing to carry the rotating part being driven by hydrogen. The susceptor is capable to rotate a two-inch diameter wafer at a rate of up to 1 revolution per second. The Ga0.47In0.53As layers grown at atmospheric pressure and a gas velocity over the substrate of 15 cm/s show a standard deviation of layer thickness of σ=±0.96% and composition variations of less than 1% within an area of 4 cm diameter.