Abstract
The surface recombination velocity of minority carriers at the grain boundaries severely affects the performance of the polycrystalline solar cells. In the present work, the effect of grain size and grain boundary recombination velocity on the short circuit photocurrent of polycrystalline copper indium gallium di‐selenide (CIGS) solar cell is estimated theoretically. The model has been used to determine the surface recombination velocity for CIGS using our own experimental data on carrier generation rate. A good agreement is found between theory and available experimental results.
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