Abstract
A new termination structure, which incorporates metal field plate over every alternate low doped p well ring is presented for planar power devices. This structure is designed to control the punch through voltage between rings to increase the blocking voltage capability while reducing the edge termination area. Measured results based on a 2kV process technology are consistent with those of numerical modelling and demonstrate that 88% of the plane parallel breakdown voltage can be achieved within 600μm while maintaining less sensitivity to fixed oxide charge.
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