Abstract
Edge termination is a critical design area for high voltage SiC power devices. Current SiC termination designs derived from Si technology face new design issues when confronted with the unique physical properties and processing constraints of SiC. This paper presents the design and comparison of the prevailing planar and non-planar edge termination techniques, including: field plates, junction termination extensions (JTE), floating guard rings, and junction beveling. Termination structures are examined with respect to device type, influence of oxide charge, and current processing limitations.
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