Abstract
Poly-Si TFTs with this new structure have been successfully fabricated and the results demonstrate a higher on-off current ratio of 5.9/spl times/10/sup 6/ and also shows the off-state leakage current 100 times lower than those of the conventional ones at V/sub GS/=-15 V and V/sub DS/=10 V. Only four photo-masking steps are required and fully compatible with the conventional TFT fabrication processes. This novel structure is a good candidate for the further high-performance large-area device applications.
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