Abstract
We report a novel gate driver integrated by low-temperature poly-Si oxide (LTPO) thin-film transistors (TFTs). The proposed gate driver consists of four p-type low-temperature polycrystalline silicon (LTPS) TFTs and two n-type amorphous indium gallium zinc oxide (a-IGZO) TFTs. Dual-gate (DG) a-IGZO TFTs, having high drain currents and excellent reliability, are utilized. The fabricated gate driver operates with a pulse width of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1~\mu \text{s}$ </tex-math></inline-formula> corresponding to operating speed of 500 kHz at voltage swing of 15 V. Also, the proposed LTPO gate driver works well without malfunction with strong depletion mode a-IGZO TFTs having threshold voltage of −5.5 V. It is exhibited that the ripples, which appear when a-IGZO TFTs have negative threshold voltage, are perfectly removed by regulating two input DC signals.
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