Abstract
ABSTRACTWe fabricated a new device, which employs counter-doped lateral body terminal (CLBT) in order to suppress kink effects and improve the device stability. Proposed device also employs a buried channel (BC), which increases ON-current and operating frequency. Although LDD structure is not employed in the proposed device, low OFF-current is successfully obtained due to elimination of minority carrier through CLBT. We have measured the dynamic properties of poly-Si TFT device and circuit. The reliability of TFT and circuits after AC stress is also discussed in our paper.The proposed poly-Si TFT has high ON-current and low OFF-current compared with conventional 3-terminal poly-Si TFT. The 4-terminal device characteristics were measured with source and CLBT shorted. The proposed device exhibits superior performance to conventional device in ON-current because BC prevents carrier scattering to gate oxide. We have performed bias and high temperature stress test of ring oscillator in order to investigate dynamic reliability between conventional poly-Si TFT and proposed 4-terminal poly-Si TFT. Our experimental results show that BC enables the device to have high mobility and switching frequency (33MHz at VDD=15V). The minority carrier elimination of CLBT suppresses kink effects and makes superb dynamic reliability of CMOS circuit.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
