A Novel Four-Mask-Step Low-Temperature Polysilicon Thin-Film Transistor With Self-Aligned Raised Source/Drain (SARSD)

Abstract

In this letter, a novel structure of polycrystalline-silicon thin-film transistors (TFTs) with self-aligned raised source/drain (SARSD) and a thin channel has been developed and investigated. In the proposed structure, a thick SD and a thin active region could be achieved with only four mask steps, which are less than that in conventional raised SD TFTs. The proposed SARSD TFT has a higher on-state current and a lower off-state leakage current. Moreover, the on/off current ratio of the proposed SARSD TFT is also higher than that of a conventional coplanar TFT