A novel fluorescent material K3NbOF6: Mn4+ for light-emitting diode devices

Abstract

A series of K3Nb1-xOF6:xMn4+ fluorescent materials were prepared by the cation exchange method. Phase structure, morphology, emission, excitation spectrum and LED packaging of fluorescent materials were tested. The fluorescent material particles are micron-sized (5 μm–20 μm) and have a micro-rod morphology. It has two absorption bands, with the blue light region (∼468 nm) being stronger than the ultraviolet region (∼370 nm). Under the excitation of 468 nm, it shows good narrowband emission in the red light region, mainly with anti-stokes v6 (∼627 nm), which is caused by the double barrier of the 2Eg→4A2g transition broken by the coupling effect of electron and phonon. The optimum doping concentration was 9.1 %, and as the concentration increased again, the dipole–dipole interaction between Mn4+ resulted in concentration quenching. When the fluorescent material operates at high temperature (150 ℃), the emission intensity drops to 50.2 % of which at room temperature. At high temperature, the electrons absorb a large amount of heat energy, and the non-radiation transition to 4A2g energy level causes the thermal quenching effect. In addition, the sample also showed good water stability, after 1 h of hydrolysis, the luminescence intensity decreased to 85.6 % of the initial value. The use of LED packaging with fluorescent materials and InGaN-YAG:Ce3+ can effectively reduce the color temperature of LED from 6856 K to 3745 K, and enhance the Color index from 61.5 % to 76.8 %. Which has great potential for development in the fields of plant growth and backlight display technology.