Abstract
In this letter, a novel Flash memory cell structure with the floating gate shaped like the Roman number "I", which can increase the gate coupling ratio of Flash Memory cell and array, thus improve the performance and reliability, is proposed. Without introducing any extra mask and complexity, the process is self-aligned and fully compatible with standard Flash Memory process. 3D process and device simulations of the novel structure in comparison with conventional cells have been carried out with Sentaurus TCAD tool. Simulation results show that increased gate coupling ratio and better control of the gate. Besides, 3*3 array has been simulated and the coupling ratio would further increase in Nor Array technology node with the decrease of adjacent contact area and coupling capacitance.
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