A Novel Field Effect Diode (Fed) Structure For Improvement Of Ion/Ioff Ratio Parameter In The Nanometer Regime

Abstract

Field Effect Diode (FED)s are interesting devices in providing the higher ON-state current and lower OFF-state current in comparison with SOI-MOSFET structures with similar dimensions. For channel length shorter than 75nm, Short Channel Effects (SCEs) deteriorates the FEDs electrical characteristics. The impact of band-to-band tunneling (BTBT) on the OFF-state current of the Side contacted FED (S-FED) has been investigated in this paper. Simulation results show that for the 65nm channel length, the BTBT increases the OFF-state current of the S-FED device noticeably. For the first time in this paper, we introduce a novel FED structure in which the oxide layer in the channel has been used. This is the so-called Silicon On Raised Insulator FED (SORI-FED). The oxide layer suppresses the electron tunneling path from the valence band into the conduction band at the device channel depth. Hence, OFF-state characteristic of the SORI-FED device improves. For 65nm channel length, the simulation results show that the SORI-FED OFF-state current is eight orders of magnitude lower than OFF-state current in M-FED. Furthermore, the SORI-FED provides 35% reduction in gate delay in comparison with M-FED.