A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement

Abstract

In this paper, we present the unique features exhibited by a novel nanoscale SiGe-on-insulator metal-oxide-semiconductor field-effect transistor (MOSFET) with modified channel band energy. The key idea in this work is to modify the band energy in the channel for improving electrical performances. Graded Ge composition profile is employed in the channel that leads to call the proposed structure as GC-SGOI structure. Using two-dimensional two-carrier simulation we demonstrate that the GC-SGOI structure has higher saturation velocity in comparison with stepped (SC-SGOI) and uniform (UC-SGOI) germanium composition due to the high conduction and valence bands slopes by using graded Ge composition profile. Also, our results show that the GC-SGOI exhibit excellent properties not only higher mobility, drain current and saturation velocity but also hot electron degradation improvement and better reliability. Therefore, refer to the results, the GC-SGOI structure has superior performances in comparison with the SC- and UC-SGOI structures which leads to be a good candidate for VLSI circuits.