Abstract
It is demonstrated that dry etching and Ar sputtering for Si surface cleaning cause phase transition failures of TiSi2 and degradation of the resistivity. We propose a Ti self-aligned-silicide (salicide) process using a grooved gate structure. In this technique, poly-Si is patterned by an oxide mask. The oxide layer protects the gate surface from contamination by dry etching for sidewall formation. Before Ti deposition, the poly-Si surface is not sputtered by Ar to clean the surface. As a result, TiSi2 agglomeration was suppressed drastically in comparison with the conventional gate structure.
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