Abstract
This paper presents a new application of (Ba, Sr)TiO3(BST) and Pb(Zr, Ti)O3 (PZT) thin films in anti-fuse and their resulting anti-fuse behaviors. Compared with amorphous silicon, BST and PZT anti-fuses demonstrate distinct advantages: lower on-state resistance and lower breakdown electric field. With the sandwich-like structure of Pt/Ferroelectric Ceramics/Pt, the devices exhibit an apparent anti-fuse behavior. The resistivity of BST structure switches from 6.7 MΩ to 12.3 Ω at the average breakdown electric field of 0.3 MV/cm, while the PZT structure switches from 106 MΩ to 10.7 Ω at the average breakdown electric field of 1.3 MV/cm. Finally, the prospect of using BST and PZT is discussed and suggestions for their improvements are proposed.
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