A non-intrusive built-in sensor for transient current testing of digital VLSI circuits

Abstract

We propose and evaluate a non-intrusive built-in monitor oriented to transient current based testing of digital CMOS VLSI circuits. The monitor measures the transient current idd(t) by sensing the voltage drop at an inductance coupled to the magnetic field produced by the power supply transient current. Designed in 120nm CMOS technology, the sensor proposed has two blocks. The transducer circuit senses the transient current and provides a voltage waveform while a second module amplifies the voltage waveform and computes the transient current waveform Idd(t) to produce the charge waveform. Simulation results, using an elaborated CUT model, demonstrate the performance of the transceiver element.