Abstract
An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution.
Highlights
In the last years, there is an increasing demand for power devices able to tolerate very high radiation levels [1,2,3]
To analyze the effect of ionization damage damage (ID), 30 V-junction field effect transistor (JFET) samples were exposed to different doses of a pure gamma radiation source
To2017, analyze the effect of ID, 30 Vertical JFET (V-JFET) samples were exposed to different doses of a pure gamma radiation source
Summary
There is an increasing demand for power devices able to tolerate very high radiation levels [1,2,3]. Among the high voltage controlled devices with two low-doped regions (p- and n-type) These devices are harder in Silicon power devices, those based on MOS technology To exhibit very different performance depending on the values of the relevant geometrical The channel is confined by a ring-shaped trench, deeply etched into the silicon substrate. The long distance that separates the drain electrode from the bottom of the trenches, the so-called drift region, provides the high voltage capability of the cell, at the cost of adding a series resistance to the conduction channel.
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