Abstract
A high speed 3350V normally-off SiC vertical junction field-effect transistor (VJFET) power device is proposed in this paper. The gate-drain Miller capacitance of the proposed VJFET is greatly reduced in comparison with that of the conventional trenched-and-implanted JFET(TI-JFET), which results in a less than 25ns extremely fast turning-off speed. Meantime, the proposed SiC VJFET also has a low specific on-resistance with a value of 11.8 $\mathrm{m} \Omega \cdot \mathrm{cm}^{2}$ when $V_{\mathrm{GS}}$ is 2.6V.
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